By Michel Houssa, Athanasios Dimoulas, Alessandro Molle
Major advancements within the semiconductor are at the horizon by utilizing two-dimensional (2D) fabrics, similar to graphene and transition steel dichalcogenides, for built-in circuits (ICs). 2D fabrics for Nanoelectronics is the 1st entire therapy of those fabrics and their functions in nanoelectronic devices.
Comprised of chapters authored by means of across the world known researchers, this book:
- Discusses using graphene for high-frequency analog circuits
- Explores good judgment and photonic functions of molybdenum disulfide (MoS2)
- Addresses novel second fabrics together with silicene, germanene, stanene, and phosphorene
- Considers using 2nd fabrics for either field-effect transistors (FETs) and common sense circuits
- Provides history at the simulation of structural, digital, and delivery homes from first principles
2D fabrics for Nanoelectronics presents vast, cutting-edge insurance of the basic and utilized features of this interesting field.
Read Online or Download 2D Materials for Nanoelectronics (Series in Materials Science and Engineering) PDF
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Extra info for 2D Materials for Nanoelectronics (Series in Materials Science and Engineering)
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59) For a normal incident wave with θ = 0, we find T = 1 as expected from the Klein paradox. 10b for a potential barrier with a width of 100 nm and a height of 200 meV for three different energies of the incoming electron. Note that T(θ) = T(−θ), and for values of k2W satisfying the relation k2W = nπ, with n as an integer, the barrier becomes completely transparent since T = 1 becomes independent of the value of θ. 7 High Mobility, Minimum Conductivity and Universal Optical Conductivity Transport measurements in graphene show a remarkably high electron mobility at room temperature .
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